Photo-induced formation of surface relief in amorphous As2S3 films

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Annealing induced phase transformations in amorphous As2S3 films

Amorphous arsenic sulphide As2S3 films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 °C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-dep...

متن کامل

Annealing-induced reduction in nanoscale heterogeneity of thermally evaporated amorphous As2S3 films

evaporated amorphous As2S3 films A. C. Y. Liu, Xidong Chen, D.-Y. Choi, and B. Luther-Davies Department of Materials Engineering, Monash University, Clayton, Victoria, 3800, Australia Materials Science Division, Argonne National Laboratory, Illinois 60439-4845, USA and Cedarville University, Cedarville, Ohio 45314, USA Centre for Ultrahigh Bandwidth Devices for Optical Systems, Laser Physics Ce...

متن کامل

Stress-induced formation of high-density amorphous carbon thin films

Amorphous carbon films with high sp content were deposited by magnetron sputtering and intense argon ion plating. Above a compressive stress of 13 GPa a strong increase of the density of the carbon films is observed. We explain the increase of density by a stress-induced phase transition of sp configured carbon to sp configured carbon. Preferential sputtering of the sp component in the carbon f...

متن کامل

Ultrafast sub-threshold photo-induced response in crystalline and amorphous GeSbTe thin films

and amorphous GeSbTe thin films M. J. Shu, I. Chatzakis, Y. Kuo, P. Zalden, and A. M. Lindenberg Department of Applied Physics, Stanford University, Stanford, California 94305, USA Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IOP Conference Series: Materials Science and Engineering

سال: 2013

ISSN: 1757-8981,1757-899X

DOI: 10.1088/1757-899x/49/1/012046